Decay length of the pressure dependent deposition rate for magnetron sputtering
Decay length of the pressure dependent deposition rate for magnetron sputtering
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DOI：
10.1116/1.581408
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发表时间：
1998-07
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影响因子：
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通讯作者：
T. Drüsedau;M. Löhmann;B. Garke
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文献类型：
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作者：
T. Drüsedau;M. Löhmann;B. Garke
通过溅射薄膜上的 X 射线测量和石英监视器测量，研究了各种元素半导体和金属的磁控溅射沉积的沉积速率的压力依赖性。研究发现，对于所有研究的元素，速率 Φ 对压力距离 (pd) 的依赖性可以通过 Φ=Φ0(1−e−cpd)/cpd 很好地描述。 c的值等于反特征压力-距离乘积(pd)0，它是低压下速率随压力指数衰减的特征。 (pd)0 的实验数据从铝的 4.6 Pa cm 到钨的 120 Pa cm 不等。结果表明 (pd)0 取决于材料的具体属性和工艺参数。材料的具体性质主要是原子质量和直径以及表面结合能。工艺参数目标电压和功率密度分别通过增加平均自由程和减少气体密度来作用于 (pd)0。作为第一个近似，该特征...
The pressure dependence of the deposition rate for magnetron sputter deposition of various elemental semiconductors and metals was investigated by x-ray measurements on sputtered films and quartz monitor measurements. It was found that for all elements investigated the dependence of the rate Φ on pressure-distance (pd) is well described by Φ=Φ0(1−e−cpd)/cpd. The value of c equals the inverse characteristic pressure-distance product (pd)0, which is the characteristics of the exponential decay of rate with pressure for low pressures. The experimental data of (pd)0 vary from 4.6 Pa cm for aluminum to 120 Pa cm for tungsten. It is shown that (pd)0 depend on both material specific properties and process parameters. The material specific properties are mainly the atomic mass and diameter, and the surface binding energy. The process parameters target voltage and power density act via the increase of the mean free path and the reduction of gas density, respectively, on (pd)0. As a first approximation, the charact...