Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE
Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE
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DOI：
10.1002/pssc.201100797
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发表时间：
2012-03
期刊：
影响因子：
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通讯作者：
Yuta Takagi;Reina Miyagawa;H. Miyake;K. Hiramatsu
中科院分区：
文献类型：
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作者：
Yuta Takagi;Reina Miyagawa;H. Miyake;K. Hiramatsu
蓝宝石衬底的周期性沟槽图案化有利于无裂纹AlN厚膜的生长。然而，AlN和a面蓝宝石之间的面内外延关系取决于初始生长温度。因此，在本研究中，两个沟槽方向，a面蓝宝石和a面蓝宝石方向进行了研究。我们研究了通过低压HVPE对AlN和a面蓝宝石之间的面内外延关系的控制以及AlN的沟槽方向的影响，这导致在a面蓝宝石上的两种不同的面内外延关系（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）。
The periodic trench patterning of sapphire substrates is useful for the growth of crack-free AlN thick films. However, the in-plane epitaxial relationship between AlN and a-plane sapphire depends on the initial growth temperature. Therefore, two trench directions, the a-plane sapphire and a-plane sapphire directions are investigated in this study. We investigated the control of in-plane epitaxial relationship between AlN and a-plane sapphire by low-pressure HVPE and the effect of the trench direction of AlN, which results in two different in-plane epitaxial relationships on a-plane sapphire (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)