1.55μm ultrafast photoconductive switches based on ErAs:InGaAs
1.55μm ultrafast photoconductive switches based on ErAs:InGaAs
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基于ErAs:InGaAs的1.55μm超快光电导开关
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
J. Smet
中科院分区：
文献类型：
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作者：
F. Ospald;D. Maryenko;K. Klitzing;D. Driscoll;M. Hanson;Hong Lu;A. Gossard;J. Smet
利用光电流自相关和1.55μm脉冲激光激发，在光导开关上研究了ErAs纳米岛和In 0.53Ga 0.47As纳米岛组成的周期性超晶格结构中电子俘获时间与超晶格周期的关系.通过改变周期，捕获时间可以从皮秒一直调整到0.2ps。探索了两种不同的Be掺杂方案来降低暗电流。由此产生的特性表明，ErAs：InGaAs可以作为一个高性能的光电导材料在此波长的脉冲太赫兹发射和检测。
The electron capture time in superlattice structures consisting of periodically spaced layers of self-assembled ErAs nanoislands and In0.53Ga0.47As is investigated on photoconductive switches as a function of the superlattice period using photocurrent autocorrelation and pulsed laser excitation at 1.55μm. The capture time can be tuned from picoseconds all the way down to 0.2ps by changing the periodicity. Two different Be doping schemes are explored to reduce the dark current. The resulting characteristics indicate that ErAs:InGaAs may serve as a high performance photoconductive material at this wavelength for pulsed terahertz emission and detection.