Ionic Field Effect Transistors with Sub-10 nm Multiple Nanopores
Ionic Field Effect Transistors with Sub-10 nm Multiple Nanopores
复制标题
DOI：
10.1021/nl900309s
复制
发表时间：
2009-05-01
期刊：
影响因子：
10.8
通讯作者：
Rossnagel, Stephen M.
中科院分区：
文献类型：
--
作者：
Nam, Sung-Wook;Rooks, Michael J.;Rossnagel, Stephen M.
我们报道了一种新的方法来制造电极嵌入式多纳米孔结构与亚10 nm的直径，这是专为电流体应用，如离子场效应晶体管。我们的方法涉及使用电子束光刻法在膜上图案化孔结构，并通过自限制原子层沉积过程收缩孔径。我们证明，70-80 nm直径的孔可以缩小到10 nm以下的直径，KCl电解质的离子传输可以有效地操纵膜内的嵌入式电极。
We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.