The past, present, and future of silicon photonics
The past, present, and future of silicon photonics
复制标题
DOI：
10.1109/jstqe.2006.883151
复制
发表时间：
2006-11-01
影响因子：
4.9
通讯作者：
Soref, Richard
中科院分区：
文献类型：
--
作者：
Soref, Richard
自2004年以来，由于工业和政府的投资，硅光子学的发展步伐加快。商业最先进的CMOS绝缘体上硅（SOI）铸造厂目前正在用于1.55 μ m单片光电（OE）集成的关键测试，该测试由美国国防高级研究计划局（DARPA）赞助。初步结果表明，硅光子学是真正的CMOS兼容。研发团队现在已经开发出10-100 Gb/s电光调制器、超快Ge-on-Si光电探测器、高效光纤到波导耦合器和Si拉曼激光器。电泵浦硅激光器正在进行深入的研究，尝试了几种方法;然而，激光尚未实现。硅基光子和光电集成电路的新范例是，这些芯片级网络，当适当设计时，将在1.2-100 μ m的宽光谱范围内的任何波长下工作，在某些情况下需要低温冷却。
The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-mu m monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. R&D groups have now developed 10-100-Gb/s electro-optic modulators, ultrafast Ge-on-Si photodetectors, efficient fiber-to-waveguide couplers, and Si Raman lasers. Electrically pumped silicon lasers are under intense investigation, with several approaches being tried; however, lasing has not yet been attained. The new paradigm for the Si-based photonic and optoelectric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of 1.2-100 mu m, with cryocooling needed in some cases.