Phase Transitions in Spin-Crossover Thin Films Probed by Graphene Transport Measurements
Phase Transitions in Spin-Crossover Thin Films Probed by Graphene Transport Measurements
复制标题
通过石墨烯输运测量探测自旋交叉薄膜中的相变
DOI：
10.1021/acs.nanolett.6b03780
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发表时间：
2017-01-01
期刊：
影响因子：
10.8
通讯作者：
van der Zantt, H. S. J.
中科院分区：
文献类型：
--
作者：
Dugay, J.;Aarts, M.;van der Zantt, H. S. J.
未来的多功能混合设备可能会结合联合收割机可切换分子和二维材料为基础的设备。自旋交叉化合物在这种情况下是特别感兴趣的，因为它们在室温下表现出双稳态和记忆效应，同时响应于许多外部刺激。石墨烯等原子薄的2D材料因其迷人的电学、光学和机械性能以及其室温操作的可靠性而吸引了大量关注。在这里，我们证明，热诱导的自旋交叉纳米粒子薄膜的自旋状态切换可以通过位于膜下面的石墨烯的电输运性质进行监测。模型计算表明，石墨烯中的电荷载流子散射机制对自旋交叉纳米颗粒的相对介电常数的自旋状态依赖性是敏感的。这种石墨烯传感器方法可以应用于具有可调电子极化率的广泛类别的（分子）系统。
Future multifunctional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room temperature while responding to numerous external stimuli. Atomically thin 2D materials such as graphene attract a lot of attention for their fascinating electrical, optical, and mechanical properties, but also for their reliability for room temperature operations. Here, we demonstrate that thermally induced spin-state switching of spin-crossover nanoparticle thin films can be monitored through the electrical transport properties of graphene lying underneath the films. Model calculations indicate that the charge carrier scattering mechanism in graphene is sensitive to the spin-state dependence of the relative dielectric constants of the spin-crossover nanoparticles. This graphene sensor approach can be applied to a wide class of (molecular) systems with tunable electronic polarizabilities.