n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C
n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C
复制标题
工作温度高达 300°C 的 n 型金刚石金属半导体场效应晶体管
DOI：
10.1109/led.2022.3156149
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发表时间：
2022
影响因子：
4.9
通讯作者：
Koizumi Satoshi
中科院分区：
文献类型：
--
作者：
Shimaoka Takehiro;Liao Meiyong;Koizumi Satoshi
金刚石功率器件的发展一直受到阻碍，由于在实现n型金刚石电子器件的挑战。在本研究中，我们报导掺磷的n型钻石金属半导体场效电晶体。我们选择性地生长重掺磷的金刚石层来提高源漏接触的欧姆性。MESFET表现出明显的夹断和饱和特性。从室温到300 ° C，平均粒径提高了100倍，为0.1/mm。
The development of diamond power devices has been hindered due to the challenge in the achievement of n-type diamond electronic devices. In this study, we report the phosphorus-doped n-type diamond metal-semiconductor field-effect transistor (MESFET). We selectively grew heavily phosphorus doped diamond layer to improve the ohmicity of the source and drain contacts. The MESFET showed clear pinch-off and saturation characteristics. The transconductance was improved to be 0.1/mm by 100 times from room temperature to 300°C.