High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)
High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)
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氮化物器件（FET 和光发射器）的高空间分辨率微拉曼温度测量
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
V. Härle
中科院分区：
文献类型：
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作者：
M. Kuball;J. Pomeroy;S. Rajasingam;A. Sarua;M. Uren;T. Martin;A. Lell;V. Härle
了解AlGaN/GaN HFET等III-氮化物半导体器件有源区的温度对于优化器件设计、性能和可靠性是至关重要的，然而，直接测量这一温度并不容易。通常用来测量有源器件温度的红外技术并不适用于AlGaN/GaN HFET，因为与仅有的微米尺寸的源漏器件开口相比，它们的空间分辨率有限。讨论了微拉曼光谱技术在微米级单指和多指AlGaN/GaN HFET器件温度在线测量中的新应用。说明了器件设计对器件温度的影响。考虑到器件温度对器件可靠性有很大的影响，研究了全晶片上器件温度的变化。还介绍了该技术在光电子器件特别是InGaN/GaN激光二极管中的应用。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Knowledge of the temperature in the active area of III‐nitride semiconductor devices such as AlGaN/GaN HFETs is essential for optimizing device design, performance and reliability, however, direct measurement of this temperature is not readily achieved. Infrared techniques often employed to measure the temperature of an active device are not well suited for AlGaN/GaN HFETs due to their limited spatial resolution when compared with the only micron‐size source‐drain device openings. The novel use of micro‐Raman spectroscopy for in‐situ measurements of device temperature, i.e., self‐heating effects, in single‐ and multi‐finger AlGaN/GaN HFETs with micrometer‐size resolution is discussed. Effects of device design on device temperature are illustrated. Variations in device temperature over a full wafer are studied considering that device reliability is strongly affected by device temperature. Applications of the technique to opto‐electronic devices in particular to InGaN/GaN laser diodes are also presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)