Ferromagnetic Ge:Mn prepared by ion implantation and pulsed laser annealing
Ferromagnetic Ge:Mn prepared by ion implantation and pulsed laser annealing
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离子注入和脉冲激光退火制备铁磁Ge:Mn
DOI：
10.1063/1.3666569
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H. Schmidt
中科院分区：
文献类型：
--
作者：
Shengqiang Zhou;D. Bürger;Lin Li;W. Skorupa;M. Helm;P. Oesterlin;H. Schmidt
报道了用脉冲激光退火法在Ge中注入Mn离子制备Ge：Mn铁磁半导体的方法。注入的Ge层在退火过程中发生再结晶。我们观察到纵向电阻和霍尔电阻表现出与磁化相同的磁滞，这通常被认为是载流子介导的铁磁性的标志。
We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn‐ion implantation into Ge followed by pulsed laser annealing. The implanted Ge layer was recrystallized during annealing. We observed that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier‐mediated ferromagnetism.