Implementation of a gap-closing differential capacitive sensing Z-axis accelerometer on an SOI wafer
Implementation of a gap-closing differential capacitive sensing Z-axis accelerometer on an SOI wafer
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DOI：
10.1088/0960-1317/19/7/075006
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发表时间：
2009-07-01
影响因子：
2.3
通讯作者：
Fang, Weileun
中科院分区：
文献类型：
--
作者：
Hsu, Chia-Pao;Yip, Ming-Chuen;Fang, Weileun
本研究提出了一种在 SOI 晶圆上实现的新型电容式 Z 轴（面外）加速度计。该加速度计包含特殊设计的间隙闭合差分传感电极。目前的Z轴加速度计具有四个优点：（1）通过结合SOI晶圆的器件和处理硅层来增加检测质量的质量，（2）通过间隙闭合差分电极设计提高灵敏度，（3）通过金属通孔实现SOI晶圆的器件和处理硅层之间的电互连，以及（4）传感间隙厚度为 由 SOI 晶圆的埋氧层精确定义。在应用中，制作并表征了Z轴加速度计。典型测量结果表明，该Z轴加速度计的灵敏度为196.3 mV G(-1) (42.5 fF G(-1))，在0.1-1 G范围内最大非线性度为2%。
This study presents a novel capacitive-type Z-axis (out-of-plane) accelerometer implemented on an SOI wafer. This accelerometer contains special designed gap-closing differential sensing electrodes. The present Z-axis accelerometer has four merits: (1) mass of the proof mass is increased by combining both device and handle silicon layers of the SOI wafer, (2) the sensitivity is improved by the gap-closing differential electrodes design, (3) the electrical interconnection between the device and handle silicon layers of the SOI wafer is available by means of the metal-vias, and (4) the sensing gap thickness is precisely defined by the buried-oxide layer of the SOI wafer. In application, the Z-axis accelerometer is fabricated and characterized. Typical measurement results demonstrate that the presented Z-axis accelerometer has a sensitivity of 196.3 mV G(-1) (42.5 fF G(-1)) and a maximum nonlinearity of 2% over the range of 0.1-1 G.