Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core‐Multishell Nanowires
Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core‐Multishell Nanowires
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迈向纳米线 HBT：同轴 GaAs/InGaP n(i)p 和 n(i)pn 核多层纳米线中的反向电流降低
DOI：
10.1002/pssa.201800562
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
A Poloczek
中科院分区：
文献类型：
--
作者：
L Liborius;F Heyer;K Arzi;C Speich;W Prost;F-J Tegude;N Weimann;A Poloczek
在这项工作中，减少反向电流的Au催化，MOVPE生长的同轴GaAs纳米线二极管的报告。通过在结内引入间隙、晶格匹配的InGaP壳（间隔物）作为隧穿势垒来实现减少，其也用作选择性蚀刻停止。随着隔离层厚度的增加，在± 1.65 V时整流比>1.57 × 106，理想因子为1.3，暗饱和电流密度低至20 pA cm− 2，这与降低的隧穿概率有关。具有薄间隔层的结的温度依赖性DC测量显示与简单（陷阱辅助）隧穿模型的相关性。绝对反向电流在pA范围内，低至−3 V偏置，通过在纳米线HBT中生长额外的外掺杂InGaP壳层作为发射极层，改进的二极管被实现为同轴n（i）pn纳米线结构中的集电极-基极结。
In this work the reduction of reverse currents in Au‐catalyzed, MOVPE grown coaxial GaAs nanowire diodes are reported. The reduction is achieved by introducing an interstitial, lattice‐matchedi‐InGaP shell (spacer) as tunneling barrier inside the junction, which also functions as a selective etch stop. With increasing spacer thickness, rectification ratios of >1.57 × 106at ± 1.65 V, ideality factors of 1.3, and dark saturation current densities as low as 20 pA cm−2are extracted, which are related to a reduced tunneling probability. Temperature‐dependent DC measurements of junctions with thin spacers show a correlation to a simple (trap‐assisted) tunneling model. With absolute reverse currents in the pA range down to −3 V bias, the improved diode is implemented as a collector‐base junction in a coaxialn(i)pnnanowire structure by growing an additional, outern‐doped InGaP shell as the emitter layer in a nanowire HBT.
影响因子：
3.8
作者：
Mokkapati, S.;Jagadish, C.
通讯作者：
Jagadish, C.
通过纳米探针技术测量 GaAs 纳米线中少数载流子扩散长度
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
A. Darbandi;S. Watkins
通讯作者：
S. Watkins
影响因子：
3
作者：
Aberg, Ingvar;Vescovi, Giuliano;Samuelson, Lars
通讯作者：
Samuelson, Lars