A novel 6H-SiC UMOSFET_ACCUFET with low specific on-resistance and peak electric field
A novel 6H-SiC UMOSFET_ACCUFET with low specific on-resistance and peak electric field
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DOI：
10.1109/commad.2008.4802111
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发表时间：
2008-07
期刊：
影响因子：
--
通讯作者：
M. Fathipour;N. Peyvast;N. Shoaazar
中科院分区：
文献类型：
--
作者：
M. Fathipour;N. Peyvast;N. Shoaazar
In this paper, a novel power UMOSFET_ACCUFET structure, based-on 6H-SiC, has been investigated. By varying the dimensions and doping concentrations of specific regions, we have obtained optimized electric field and on-resistance. Two approaches have been applied to the simple UMOSFET structure, both of which result in lower peak electric field in the device in the blocking state.
