Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors
Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors
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DOI:
10.1039/c3nr02958a
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发表时间:
2013-01-01
期刊:
影响因子:
6.7
通讯作者:
Xia, Dandan
中科院分区:
文献类型:
--
作者:
Chen, Haichao;Jiang, Jianjun;Xia, Dandan
A 3D highly conductive urchin-like NiCo2S4 nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo2S4 electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.