Effect of Thermal Stress on Orientation Control of CSD-Derived Pb(Zr0.53Ti0.47)O3 Thin Films
Effect of Thermal Stress on Orientation Control of CSD-Derived Pb(Zr0.53Ti0.47)O3 Thin Films
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DOI：
10.1111/j.1744-7402.2011.00699.x
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发表时间：
2012-07
影响因子：
2.1
通讯作者：
T. Noda;Kazuki Komaki;N. Sakamoto;N. Wakiya;Hisao Suzuki
中科院分区：
文献类型：
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作者：
T. Noda;Kazuki Komaki;N. Sakamoto;N. Wakiya;Hisao Suzuki
Pb（Zr0.53Ti0.47）O3（PZT）薄膜的电学性能受薄膜取向的影响很大。特别是c轴取向的PZT薄膜表现出更高的电性能。然而，对c轴的完美取向控制是非常困难的，特别是对于化学溶液沉积（CSD）的情况。因此，我们试图通过施加热应力来弄清楚影响CSD衍生的PZT薄膜的膜取向的因素。我们使用不锈钢（SS）基板具有较高的热膨胀系数和CSD衍生的LNO种子层，这表现出良好的晶格匹配与c-平面的PZT和类似的热膨胀系数的SS基板，施加热压应力的PZT薄膜在冷却过程中。结果表明，我们成功地制备出了具有较高反射极化率（Pr）的c轴择优取向PZT薄膜，其反射极化率超过30 μC/cm ~ 2，磁滞回线矩形度良好。这些结果表明，由基片约束力产生的热压应力不仅对PZT薄膜的取向控制非常有效，而且对改善PZT薄膜的电学性能也非常有效。这一策略对于获得具有优异电学性能的铁电薄膜至关重要。
Electrical properties of Pb(Zr0.53Ti0.47)O3 (PZT) thin films are significantly affected by the film orientation. Especially c-axis-oriented PZT thin films exhibit higher electrical properties. However, perfect orientation control to c-axis is very difficult, especially for the case of chemical solution deposition (CSD). Therefore, we tried to make clear the factors that affect the film orientation of the CSD-derived PZT thin films, by applying the thermal stress. We used stainless steel (SS) substrates with higher thermal expansion coefficients and the CSD-derived LNO seeding layer, which showed good lattice matching with c-plane of PZT and similar thermal expansion coefficient to the SS substrates, to apply the thermal compressive stress to the PZT thin film during cooling. As a result, we successfully deposited the selectively c-axis-oriented PZT thin film with higher remanent polarization, Pr, over 30 μC/cm2 and good squareness of the hysteresis loop. These results elucidate that the thermal compressive stress by the constraint force from substrate is very effective not only for the orientation contol of the resulting PZT thin films but also to improve the electrical properties of the PZT thin films. This strategy is essential to obtain the ferroelectric thin films with excellent electrical properties.