Fabrication of L10-Ordered MnAl Films for Observation of Tunnel Magnetoresistance Effect
Fabrication of L10-Ordered MnAl Films for Observation of Tunnel Magnetoresistance Effect
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DOI：
10.7567/jjap.52.063003
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发表时间：
2013-06
影响因子：
1.5
通讯作者：
Haruaki Saruyama;M. Oogane;Yuta Kurimoto;H. Naganuma;Y. Ando
中科院分区：
文献类型：
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作者：
Haruaki Saruyama;M. Oogane;Yuta Kurimoto;H. Naganuma;Y. Ando
我们成功地制备了L10有序MnAl薄膜的垂直磁各向异性能量为107 erg/cm ~ 3和一个小的平均膜粗糙度为0.4 nm，通过使用熔融Mn-Al溅射合金靶和优化衬底温度。此外，我们还研究了用所制备的L10有序MnAl电极制作的磁性隧道结的隧道磁电阻效应。在室温下，在MnAl电极和MgO隧穿势垒界面中插入非常薄的Co_（50）Fe_（50）层的MTJ中观察到TMR效应。这是第一次观察到的TMR效应的MTJ与L10有序的MnAl电极。
We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn–Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.