MOSFET Degradation Under RF Stress
MOSFET Degradation Under RF Stress
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RF 应力下 MOSFET 退化
DOI：
10.1109/ted.2008.2004650
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发表时间：
2008
影响因子：
3.1
通讯作者：
J. Schmitz
中科院分区：
文献类型：
--
作者：
G. Sasse;F. Kuper;J. Schmitz
我们报道了在射频应力下MOS晶体管的退化。研究了热载流子降解、负偏置温度不稳定性和栅极介电击穿。研究结果与已建立的电压和场驱动模型进行了比较。实验结果表明，现有模型可以在千兆赫范围内描述射频电路中MOS晶体管的退化。在如此高的应力频率下，栅极介电击穿的概率似乎迅速降低，增加了射频功率电路的设计余量。
We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.