High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
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在低缺陷密度 Ge/GeSi/Si 衬底上生长的 GaAs 具有较高的少数载流子寿命
DOI：
10.1063/1.122689
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发表时间：
1998
影响因子：
4
通讯作者：
B. Keyes
中科院分区：
文献类型：
--
作者：
R. Sieg;J. Carlin;J. Boeckl;S. Ringel;M. Currie;S. Ting;T. Langdo;G. Taraschi;E. Fitzgerald;B. Keyes
在Si基衬底上生长的GaAs具有高的体少子寿命。这是通过利用在切下的（001）Si晶片上生长的阶跃Ge/GeSi缓冲层（穿透位错密度2×106 cm−2），结合GaAs成核的单层尺度控制以抑制反相畴来实现的。 使用室温时间分辨光致发光测量了一系列掺杂n=1.1×1017 cm−3的Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As双异质结结构的体少子寿命（τp），GaAs厚度为0.5、1.0和1.5 μm。 在Si衬底上生长的GaAs的寿命τp= 7.7ns。提取的界面复合速度为3.9×103 cm/s，与GaAs和Ge晶片上生长的Al 0.3Ga 0.7As/GaAs界面的复合速度相当，表明应变弛豫Ge/GeSi表面的交叉阴影线表面形貌特征不会阻碍高电子质量界面的形成。这些结果有很大的希望...
A high bulk minority-carrier lifetime in GaAs grown on Si-based substrates is demonstrated. This was achieved by utilizing a step-graded Ge/GeSi buffer (threading dislocation density 2×106 cm−2) grown on an offcut (001) Si wafer, coupled with monolayer-scale control of the GaAs nucleation to suppress antiphase domains. Bulk minority-carrier lifetimes (τp) were measured using room-temperature time-resolved photoluminescence applied to a series of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As double-heterojunction structures doped n=1.1×1017 cm−3 with GaAs thicknesses of 0.5, 1.0, and 1.5 μm. A lifetime τp=7.7 ns was determined for GaAs grown on Si. The extracted interface recombination velocity of 3.9×103 cm/s is comparable to recombination velocities found for Al0.3Ga0.7As/GaAs interfaces grown on both GaAs and Ge wafers, indicating that the crosshatch surface morphology characteristic of strain-relaxed Ge/GeSi surfaces does not impede the formation of high-electronic-quality interfaces. These results hold great promise...