Robust, high-performance n-type organic semiconductors
Robust, high-performance n-type organic semiconductors
复制标题
DOI：
10.1126/sciadv.aaz0632
复制
发表时间：
2020-04-01
期刊：
影响因子：
13.6
通讯作者：
Takeya, Jun
中科院分区：
文献类型：
--
作者：
Okamoto, Toshihiro;Kumagai, Shohei;Takeya, Jun
有机半导体（OSC）是制造下一代有机电子产品的重要活性材料。然而，在电荷载流子迁移率和环境稳定性方面，n型OSC的发展落后于p型OSC。这是由于缺乏满足要求的分子设计。本研究描述了基于具有挑战性的分子特征的n型OSC的设计和合成，所述分子特征涉及含有电负性N原子和取代基的π电子核心。独特的π电子系统同时加强了电子和结构相互作用。目前的n型OSC表现出高电子迁移率，具有高可靠性、大气稳定性以及对环境和热应力的鲁棒性，并且上级其他现有的n型OSC。这种分子设计代表了高端有机电子产品开发的合理策略。
Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a pi-electron core containing electronegative N atoms and substituents. The unique pi-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.