Ablation of GaAs by intense, ultrafast electronic excitation from highly charged ions
Ablation of GaAs by intense, ultrafast electronic excitation from highly charged ions
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DOI：
10.1103/physrevlett.81.2590
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发表时间：
1998-09-21
影响因子：
8.6
通讯作者：
Doyle, BL
中科院分区：
文献类型：
--
作者：
Schenkel, T;Hamza, AV;Doyle, BL
我们测量了未掺杂GaAs（100）与慢速（v = 6.6 × 10（5）m/s）、高电荷离子相互作用的总烧蚀率和二次离子产额。烧蚀率随着抛射电荷的增加而急剧增加。当单个Th 70+离子在几飞秒内将152.6 keV的势能沉积到纳米尺寸的靶体积中时，大约1400个靶原子被去除。我们讨论了强烈的，超快的电子激发的半导体烧蚀模型。[S0031-9007（98）07165-8]。
We have measured total ablation rates and secondary ion yields from undoped GaAs(100) interacting with slow (v = 6.6 x 10(5) m/s), very highly charged ions. Ablation rates increase strongly as a function of projectile charge. Some 1400 target atoms are removed when a single Th70+ ion deposits a potential energy of 152.6 keV within a few femtoseconds into a nanometer-sized target volume. We discuss models for ablation of semiconductors by intense, ultrafast electronic excitation. [S0031-9007(98)07165-8].