InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
复制标题
固源分子束外延生长 InGaP 包层的 InAs/GaAs 量子点激光器
DOI：
10.1063/1.1445269
复制
发表时间：
2002
影响因子：
4
通讯作者：
J. Chyi
中科院分区：
文献类型：
--
作者：
N. Yeh;Wei;Shu;P. Chiu;J. Chyi
本文介绍了采用固体源分子束外延生长InGaP包层的InAs/GaAs量子点激光器的激光特性。在室温下，这些无铝激光器的阈值电流密度为138 a /cm2，内部损耗为1.35 cm−1，内部量子效率为31%。在低温下，测量到425 K的极高特征温度和30 a /cm2的极低阈值电流密度。
This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm−1, and an internal quantum efficiency of 31% at room temperature. At a low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.