Electroluminescence emission from light-emitting diode of p-ZnO/"InGaN/GaN… multiquantum well/n-GaN
Electroluminescence emission from light-emitting diode of p-ZnO/"InGaN/GaN… multiquantum well/n-GaN
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DOI：
10.1063/1.3601915
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发表时间：
2011-06
影响因子：
4
通讯作者：
Tae-Young Park;Yong‐Seok Choi;Sang-Mook Kim;G. Jung;Seong-Ju Park;B. Kwon;Yong‐Hoon Cho
中科院分区：
文献类型：
--
作者：
Tae-Young Park;Yong‐Seok Choi;Sang-Mook Kim;G. Jung;Seong-Ju Park;B. Kwon;Yong‐Hoon Cho
我们报告了由锑 (Sb) 掺杂 p-ZnO、(InGaN/GaN) 多量子阱 (MQW) 和 n-GaN 组成的发光二极管 (LED) 的制造和特性。在 750 °C 热退火后，混合 LED 观察到波长为 468 nm 的电致发光 (EL) 发射，表明 Sb 掺杂 p-ZnO 可以用作混合 LED 中的空穴供应层。此外，随着注入电流的增加，EL 峰值发生红移，表明 MQW 层中的压缩应变由于 Sb 掺杂的 p-ZnO 层而得到松弛。
We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped p-ZnO, (InGaN/GaN) multiquantum well (MQW), and n-GaN. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at 750 °C, showing that Sb-doped p-ZnO can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped p-ZnO layer.