AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications
AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications
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DOI：
10.1109/tmtt.2002.807685
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发表时间：
2003-02
影响因子：
4.3
通讯作者：
Younkyu Chung;C. Y. Hang;S. Cai;Y. Qian;C. Wen;K. Wang;T. Itoh
中科院分区：
文献类型：
--
作者：
Younkyu Chung;C. Y. Hang;S. Cai;Y. Qian;C. Wen;K. Wang;T. Itoh
提出了一种用于射频前端电路的高效率、紧凑型AlGaN/GaN异质结场效应晶体管（HFET）功率放大器，该放大器集成了7.25 GHz微带天线。微带圆扇形天线被用作辐射器和频率相关的输出负载。由于天线的谐波终止特性，在非线性操作中来自HFET的高阶谐波被电抗性地终止。基于负载牵引测量装置测量的最佳负载阻抗，AlGaN/GaN HFET功率放大器已被设计和制造在7.25 GHz使用有源集成天线的概念。在这种设计方法中，测得的天线阻抗直接转换为最佳负载阻抗，以实现最大效率。具有1 mm栅极外围的功率放大器显示出42%的峰值功率增加效率和30.3 dBm的饱和输出功率，线性增益为8 dB，这与测量的分立HFET负载牵引数据相当吻合。由于天线的特性，在E平面和H平面的二次和三次谐波频率处都实现了优于30 dB的谐波抑制。据作者所知，这是第一次演示与天线集成的高频AlGaN/GaN HFET功率放大器。
A high-efficiency and compact AlGaN/GaN heterojunction field-effect transistor (HFET) power amplifier integrated with a microstrip antenna at 7.25 GHz is presented for RF front-end circuit applications. A microstrip circular sector antenna is employed as both a radiator and frequency-dependent output load. Higher order harmonics from the HFET in nonlinear operation are reactively terminated because of the harmonic termination characteristic of the antenna. Based on the optimum load impedance measured by a load-pull measurement setup, the AlGaN/GaN HFET power amplifier has been designed and fabricated at 7.25 GHz using the active integrated antenna concept. In this design approach, the measured antenna impedance is directly transformed to the optimum load impedance for maximum efficiency. The power amplifier with 1-mm gate periphery shows 42% peak power-added efficiency and 30.3-dBm saturated output power with a linear gain of 8 dB, which is in reasonably good agreement with measured discrete HFET load-pull data. Due to the antenna's characteristics, better than 30-dB harmonic suppression has been achieved at both the second and third harmonic frequencies in both the E- and H-planes. To the authors' best knowledge, this is the first demonstration of a high-frequency AlGaN/GaN HFET power amplifier integrated with an antenna.