Mechanical and electrical properties of micron-thick nitrogen-doped tetrahedral amorphous carbon coatings
Mechanical and electrical properties of micron-thick nitrogen-doped tetrahedral amorphous carbon coatings
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DOI：
10.1016/j.diamond.2016.08.001
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发表时间：
2016-10-01
影响因子：
4.1
通讯作者：
Kim, Jongkuk
中科院分区：
文献类型：
--
作者：
Jang, Young-Jun;Kang, Yong-Jin;Kim, Jongkuk
利用特制的过滤式阴极真空电弧（FCVA）研究了氮掺杂对厚度达1pm的单层四面体非晶碳（ta-C:N）涂层力学性能和电性能的影响。结果表明，随着氮气比的增加，涂层的硬度和电阻从65 +/- 4.8 GPa （3 k ω /平方）下降到25 +/- 2.4 GPa （10 ω /平方），表明sp(2)相中发生了氮的取代掺杂。随后的AES分析表明，ta-C:N厚膜涂层的N/C比值在0.03 ~ 029之间，随氮气流量增大而增大。G峰位置和I(D)/I(G)比值的变化趋势相似。从这些结果可以得出结论，微米厚的ta-C:N薄膜具有广泛应用于电子功能涂层的潜力。(C) 2016 Elsevier B.V.版权所有
The effect of nitrogen doping on the mechanical and electrical performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to 1 pm in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness and electrical resistance of the coatings decreased from 65 +/- 4.8 GPa (3 k Omega/square) to 25 +/- 2.4 GPa (10 Omega/square) with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the sp(2) phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 029 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics. (C) 2016 Elsevier B.V. All rights reserved.