CVD of Zr0.65Ti0.35O2 thin films using a single-source precursor of novel anhydrous mixed-metal nitrates
CVD of Zr0.65Ti0.35O2 thin films using a single-source precursor of novel anhydrous mixed-metal nitrates
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DOI：
10.1002/cvde.200506480
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发表时间：
2006-07
影响因子：
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通讯作者：
Q. Shao;Aidong Li;Wen-Qi Zhang;Di Wu;Zhi-guo Liu;N. Ming
中科院分区：
文献类型：
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作者：
Q. Shao;Aidong Li;Wen-Qi Zhang;Di Wu;Zhi-guo Liu;N. Ming
一种新型的Zr/Ti混合金属硝酸盐[ZrxTi 1-x（NO3）4]已被成功地开发为存款多元金属氧化物薄膜的单源前驱体。X射线光电子能谱（XPS）和X射线衍射（XRD）分析表明，以该硝酸盐为前驱体，采用CVD法成功制备了Zr0.65Ti0.35O2薄膜。研究了Zr0.65Ti0.35O2薄膜的基本介电性能，得到了清晰的C-V曲线，其滞后可忽略不计。与纯TiO 2和ZrO 2薄膜相比，Zr0.65Ti0.35O2薄膜具有较好的介电性能，其禁带宽度为4.3eV，介电常数为47.因此，ZrxTi 1-xO 2是一种很有前途的栅介质材料，而无水混合金属硝酸盐是CVD高k材料的潜在单源前驱体。
A novel Zr/Ti mixed metal nitrate[Zr x Ti 1-x (N03)4] has been successfully developed as a single-source precursor to deposit multicomponent metal oxide films. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analyses confirm that Zr 0.65 Ti 0.35 O 2 films are successfully prepared from this anhydrous nitrate precursor using CVD. The basal dielectric properties of Zr 0.65 Ti 0.35 O 2 films are studied, and well-defined C-V curves with negligible hysteresis are achieved. Compared to pure TiO 2 and ZrO 2 films, the Zr 0.65 Ti 0.35 O 2 films exhibit a trade-off of dielectric properties with a moderate bandgap value of 4.3 eV and a value for k of 47. Zr x Ti 1-x O 2 is, therefore, a promising candidate for gate-dielectric application, and an anhydrous mixed-metal nitrate can be a potential single-source precursor for high-k materials derived from CVD.