Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications
Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications
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DOI:
10.1063/1.2799247
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发表时间:
2007-10
影响因子:
4
通讯作者:
J. Kittl;M. Pawlak;C. Torregiani;A. Lauwers;C. Demeurisse;C. Vrancken;P. Absil;S. Biesemans;C. Coia;C. Detavernier;J. Jordan-Sweet;C. Lavoie
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文献类型:
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作者:
J. Kittl;M. Pawlak;C. Torregiani;A. Lauwers;C. Demeurisse;C. Vrancken;P. Absil;S. Biesemans;C. Coia;C. Detavernier;J. Jordan-Sweet;C. Lavoie
The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30–170nm)/polycrystalline-Si (100nm)∕SiO2 (10–30nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi∕tSi), with formation of NiSi2 (∼600°C), NiSi (∼400°C), Ni3Si2 (∼500°C), Ni2Si, Ni31Si12 (∼420°C), and Ni3Si (∼600°C) in stacks with tNi∕tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temper...