Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications

Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications
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DOI:
10.1063/1.2799247
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发表时间:
2007-10
影响因子:
4
通讯作者:
J. Kittl;M. Pawlak;C. Torregiani;A. Lauwers;C. Demeurisse;C. Vrancken;P. Absil;S. Biesemans;C. Coia;C. Detavernier;J. Jordan-Sweet;C. Lavoie
J. Kittl;M. Pawlak;C. Torregiani;A. Lauwers;C. Demeurisse;C. Vrancken;P. Absil;S. Biesemans;C. Coia;C. Detavernier;J. Jordan-Sweet;C. Lavoie
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
J. Kittl;M. Pawlak;C. Torregiani;A. Lauwers;C. Demeurisse;C. Vrancken;P. Absil;S. Biesemans;C. Coia;C. Detavernier;J. Jordan-Sweet;C. Lavoie

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在斜坡退火过程中,通过原位X射线衍射监测Ni/多晶Si薄膜反应,从而获得完全硅化栅极应用中感兴趣的叠层中硅化物相的形成和演变的详细视图。样品由沉积在(100)Si上的Ni(30- 170 nm)/多晶Si(100 nm)scinSiO_2(10- 30 nm)叠层组成。主导结束阶段(在完全硅化之后)被发现通过沉积的Ni与多晶Si的厚度比(tNi闪烁Si)很好地控制,形成堆叠的NiSi 2(~ 600°C)、NiSi(~ 400°C)、Ni 3Si 2(~ 500°C)、Ni 2Si、Ni 31 Si 12(~ 420°C)和Ni 3Si(~ 600°C),其中tNi闪烁Si为0.3、0.6、0.9、1.2、1.4、1.5、1.6、1.7、1.8、1.9分别为1.7。观察到NiSi和Ni 31 Si 12分别先于NiSi 2和Ni 3Si的形成,正如常规报道的相序列所预期的那样。在反应的早期阶段观察到Ni 2Si的形成。此外,这些研究还揭示了在窄温区出现和消失的瞬态相的形成。
The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30–170nm)/polycrystalline-Si (100nm)∕SiO2 (10–30nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi∕tSi), with formation of NiSi2 (∼600°C), NiSi (∼400°C), Ni3Si2 (∼500°C), Ni2Si, Ni31Si12 (∼420°C), and Ni3Si (∼600°C) in stacks with tNi∕tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temper...