Enhanced efficiency of Er: Yb: Ce: NaGd(WO4)2 laser at 1.5-1.6 μm by the introduction of high-doping Ce3+ ions
Enhanced efficiency of Er: Yb: Ce: NaGd(WO4)2 laser at 1.5-1.6 μm by the introduction of high-doping Ce3+ ions
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DOI：
10.1364/ol.33.002548
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发表时间：
2008-11-01
期刊：
影响因子：
3.6
通讯作者：
Huang, Yidong
中科院分区：
文献类型：
--
作者：
Huang, Jianhua;Chen, Yujin;Huang, Yidong
在Er：Yb：Ce：NaGd（WO 4）（2）晶体中，高掺杂Ce ~（3+）离子的引入降低了Er ~（3+）离子的上转换荧光，提高了Yb ~（3+）离子向Er ~（3+）离子的能量转移效率。用半导体激光器端面抽运970 nm半导体激光器，在1.7mm厚的c切Er：Yb：Ce：NaGd（WO_4）（2）晶体中获得了2.0W的1.5-1.6 μ m准连续激光输出，斜率效率为19%，吸收抽运阈值为2.0W。结果表明，Er.：高掺Ce ~（3+）离子的Yb：Ce：NaGd（WO_4）（2）晶体是一种潜在的低阈值1.5-1.6 μ m激光增益介质。(C)2008年美国光学学会
By the introduction of high-doping Ce3+ ions, the upconversion fluorescence of EP3+ ions was reduced, and the energy-transfer efficiency from Yb3+ to Er3+ ions was enhanced significantly in Er:Yb: Ce: NaGd(WO4)(2) crystals. End pumped by a diode laser at 970 nm in a hemispherical cavity, a 2.0 W quasi-cw laser at 1.5-1.6 mu m with slope efficiency of 19% and absorbed pump threshold of 2.0 W was achieved in a 1.7-mm-thick c-cut Er:Yb:Ce:NaGd(WO4)(2) crystal. The results show that the Er.:Yb:Ce:NaGd(WO4)(2) crystal with high-doping Ce3+ ions is a potential gain medium for a low-threshold 1.5-1.6 mu m laser. (C) 2008 Optical Society of America