Heat dissipation in carbon nanotube transistors
Heat dissipation in carbon nanotube transistors
复制标题
DOI：
10.1063/1.2382734
复制
发表时间：
2006-11
影响因子：
4
通讯作者：
Y. Ouyang;Jing Guo
中科院分区：
文献类型：
--
作者：
Y. Ouyang;Jing Guo
通过求解非平衡绿色函数输运方程和热输运方程自洽求解，研究了碳纳米管肖特基势垒场效应晶体管的热耗散及其对电流的影响。半导体CNT沟道中的温度上升显著小于其金属对应物，因为（i）半导体CNT沟道中耗散的总功率的百分比较小，以及（ii）热耗散在沟道的两端处达到峰值。模拟表明，在感兴趣的纳米电子应用的偏置制度，对晶体管的I-V特性的加热的影响是小的。
Heat dissipation and its effect on current in carbon nanotube (CNT) Schottky barrier field-effect transistors are studied by solving nonequilibrium Green’s function transport equation self-consistently with a heat transport equation. Temperature rise in the semiconducting CNT channel is significantly smaller than its metallic counterpart because (i) the percentage of total power dissipated in the semiconducting CNT channel is smaller, and (ii) the heat dissipation reaches peak values at two ends of the channel. The simulation indicates that in the bias regime of interest to nanoelectronic applications, the effect of heating on the transistor I-V characteristics is small.