A simple catalyst-free route for large-scale synthesis of SiC nanowires
A simple catalyst-free route for large-scale synthesis of SiC nanowires
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大规模合成碳化硅纳米线的简单无催化剂路线
DOI：
10.1016/j.jallcom.2011.03.131
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发表时间：
2011-06-16
影响因子：
6.2
通讯作者：
Zhu, Xiaoyan
中科院分区：
文献类型：
--
作者：
Chen, Jianjun;Shi, Qiang;Zhu, Xiaoyan
以硅粉和可膨胀石墨为原料，采用简单的无催化剂方法制备了大量的SiC纳米线。数码相机、X射线衍射仪、傅里叶变换红外光谱仪、场发射扫描电子显微镜和透射电子显微镜等分析表明，在石墨坩埚中得到了大量疏松的产物。该产品由单晶3C-SiC纳米线组成，长度可达几十微米，直径为20-60 nm。用气-固机制解释了SiC纳米线的生长过程。可膨胀石墨作为碳源可以为纳米线提供足够的生长空间，有助于提高SiC纳米线的产率。这种简单的方法为SiC纳米线的工业化制备提供了一种很有前途的方法。(C)2011爱思唯尔有限公司版权所有。
A large number of SiC nanowires were fabricated by a simple catalyst-free method using silicon powders and expandable graphite as raw materials. Digital camera, X-ray diffractometer, Fourier transform infrared spectrometer, field-emission scanning electron microscopy and transmission electron microscopy demonstrate that a large number of loose products were obtained in graphite crucible. The products are composed of single crystalline 3C-SiC nanowires with lengths up to several tens of micrometers and diameters of 20-60 nm. The vapor-solid mechanism was proposed to interpret the growth procedure of SiC nanowires. The expandable graphite as carbon source can provide enough growth space for nanowires, which is helpful to improve the yield of SiC nanowires. The simple method provides a promising candidate for industrial fabrication of SiC nanowires. (C) 2011 Elsevier B.V. All rights reserved.