A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
复制标题
用于电子和空穴自旋量子位探索的灵活 300 mm 集成 Si MOS 平台
DOI：
--
复制
发表时间：
2020
期刊：
影响因子：
--
通讯作者：
I. Radu
中科院分区：
文献类型：
--
作者：
R. Li;N. D. Stuyck;S. Kubicek;J. Jussot;B. Chan;F. Mohiyaddin;A. Elsayed;M. Shehata;G. Simion;C. Godfrin;Y. Canvel;T. Ivanov;L. Goux;B. Govoreanu;I. Radu
我们报告了一种灵活的300毫米工艺，该工艺最佳地结合了光学和电子束光刻来制造硅自旋量子比特。它支持动态布局设计修改，同时允许器件采用n型或p型欧姆植入，间距小于100 nm，均匀临界尺寸低至30 nm，标准偏差约1.6 nm。各种n型和p型量子比特在温度~ 10 mK的稀释冰箱中被表征。电测量显示了定义良好的量子点，可调谐的隧道耦合和相干自旋控制，这是实现大规模量子处理器的基本要求。
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.