4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose
4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose
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DOI：
10.1109/ispsd.2008.4538949
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
M. Noborio;J. Suda;T. Kimoto
中科院分区：
文献类型：
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作者：
M. Noborio;J. Suda;T. Kimoto
为了进一步改进横向功率器件，制备并表征了具有高RESURF剂量的4H-SiC双RESURF mosfet。随着RESURF剂量的增加，漂移电阻降低，击穿电压升高，但当RESURF剂量过高时，氧化物会发生击穿。由于在RESURF区域的掺杂浓度较高，双RESURF mosfet在高温下的漂移电阻增幅小于单RESURF mosfet。制备的4H-SiC（0001）双RESURF mosfet击穿电压（VB）为1430 V，导通电阻（RON）为57 mOmegacm2，而4H-SiC（0001）表面的mosfet击穿电压为1550 V，导通电阻为54 22 2 / mOmegacm2。在硅面和C面制备的器件的品质系数（VB /RON）分别为36 MW/cm2和44 MW/cm2，是迄今报道的任何横向mosfet中最高的值。
For further improvement of lateral power devices, 4H-SiC double RESURF MOSFETs with high RESURF doses have been fabricated and characterized. The drift resistance was decreased and the breakdown voltage was increased with increasing RESURF doses, although oxide brekaodown occurs when the RESURF doses are too high. The increase in drift resistance at elevated temperature was smaller for double RESURF MOSFETs than single RESURF MOSFETs, due to the higher doping concentration in the RESURF region. The fabricated 4H- SiC (0001) double RESURF MOSFETs exhibited a breakdown voltage (VB) of 1430 V and an on-resistance (RON) of 57 mOmegacm2, and the MOSFETs on 4H-SiC (0001 macr) face demonstrated a higher breakdown voltage of 1550 V and a lower on-resistance of 54 2 2 / mOmegacm2 . The figure-of-merit (VB /RON) of the fabricated device on Si face and C face is 36 MW/cm2 and 44 MW/cm2, respectively, which is the highest value among any lateral MOSFETs ever reported.