Deposited silicon nitride with low electron trapping rates
Deposited silicon nitride with low electron trapping rates
复制标题
具有低电子捕获率的沉积氮化硅
DOI：
10.1063/1.354121
复制
发表时间：
1993
影响因子：
3.2
通讯作者：
N. Johnson
中科院分区：
文献类型：
--
作者：
Y. Park;W. Jackson;D. L. Smith;N. Johnson
In this article, nitrogen‐rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma‐deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.
