Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory
Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory
复制标题
原位反射各向异性光谱和从头算密度泛函理论对 GaP/Si(100) 异质界面的原子尺度分析
DOI:
10.1103/physrevb.90.235301
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发表时间:
2014
影响因子:
3.7
通讯作者:
T. Hannappel
中科院分区:
文献类型:
--
作者:
O. Supplie;S. Brückner;O. Romanyuk;H. Döscher;C. Höhn;M. May;P. Kleinschmidt;F. Grosse;T. Hannappel
Oliver Supplie,1,2,3,* Sebastian Brückner,1,2 Oleksandr Romanyuk,4 Henning Döscher,1,† Christian Höhn,2 Matthias M. May,2,3 Peter Kleinschmidt,1,2 Frank Grosse,5 and Thomas Hannappel1,2 1Technische Universität Ilmenau, Institut für Physik, Gustav-Kirchhoff-Straße 5, 98684 Ilmenau, Germany 2Helmholtz-Zentrum Berlin, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Germany 3Humboldt-Universität zu Berlin, Institut für Physik, Newtonstraße 15, 12489 Berlin, Germany 4Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 00 Prague 6, Czech Republic 5Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany (Received 8 August 2014; revised manuscript received 31 October 2014; published 1 December 2014)