Nanoscale active hybrid plasmonic laser with a metal-clad metal-insulator-semiconductor square resonator
Nanoscale active hybrid plasmonic laser with a metal-clad metal-insulator-semiconductor square resonator
复制标题
具有金属包层金属-绝缘体-半导体方形谐振器的纳米级主动混合等离子体激光器
DOI：
10.1364/josab.31.001422
复制
发表时间：
2014-07-01
影响因子：
1.9
通讯作者：
Xu, Ke
中科院分区：
文献类型：
--
作者：
Huang, Zengli;Wang, Jianfeng;Xu, Ke
研究了一种金属包层金属-绝缘体-半导体（MIS）方形谐振腔的纳米级有源混合等离子体激元激光器。通过在MIS结构周围形成金属层，腔模可以很好地约束到半导体纳米正方形顶部的间隔物区域中的超小体积，并且腔Q因子可以通过改变间隔物高度来静态调谐，并且对晶片键合衬底的影响很小。对优化结构的数值模拟表明，由于辐射损耗接近于零和金属损耗较低，腔反馈得到了显著改善。丰富的直接带隙InGaN增益材料和较低的阈值增益使这种结构成为室温下工作的纳米激光器的一个有前途的平台。四能级双电子时域有限差分模拟表明，该腔可实现室温可见光激射，光抽运阈值约为190 μ W，InGaN的有源材料增益应达到0.855 μ m（-1）。(C)2014年美国光学学会
We investigate a nanoscale active hybrid plasmonic laser with a metal-clad metal-insulator-semiconductor (MIS) square resonator. By forming a metal layer surrounding the MIS structure, the cavity mode can be well bound to the ultrasmall volume in the spacer region atop a semiconductor nanosquare, and the cavity Q factor can be statically tuned by changing the spacer height and has little influence on the wafer bonding substrate. Numerical simulations for an optimized structure show that the cavity feedback has been significantly improved due to the near-zero radiative loss and low metal loss. Abundant direct-gap InGaN gain material and low threshold gain make this structure a promising platform for nanolaser operating at room temperature. A four-level two-electron finite-difference time-domain simulation shows that this cavity can achieve room-temperature lasing at visible wavelengths with an estimated optical pump threshold of 190 mu W, and the active material gain of InGaN should reach 0.855 mu m(-1). (C) 2014 Optical Society of America