Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport
Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport
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DOI：
10.1063/1.1525068
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发表时间：
2003-01-01
影响因子：
3.2
通讯作者：
Ho, J
中科院分区：
文献类型：
--
作者：
Knipp, D;Street, RA;Ho, J
报道了蒸发并五苯有机薄膜晶体管（TFT）的结构和输运性质，并讨论了不同无机掺杂条件对薄膜晶体管结构和输运性质的影响。探索与大面积制造兼容的电介质以促进玻璃或柔性塑料基板上的低成本电子器件。X射线衍射和原子力显微镜显示，对于所研究的所有电介质，高度多晶薄膜的形态和结构之间存在明显的相关性。的电介质的粗糙度有一个明显的影响的形态和结构特性，而光滑的热氧化物上的膜一般是高度有序的和独立的沉积条件。有序薄膜表现出“薄膜”和体相，并且体相体积分数随着沉积温度和薄膜厚度的增加而增加。仔细控制沉积条件，在热氧化物和氮化硅衬底上得到几乎相同的薄膜。反交错晶体管的电子性质表明，TFT的迁移率与薄膜的形貌和结构有关。TFT在热氧化物和氮化硅上表现出非常相似的迁移率，接近0.4 cm（2）/Vs，开/关比>10（8）。讨论了介质对器件迁移率、阈值电压和亚阈值电压斜率等参数的影响。温度依赖的迁移率的测量进行研究的陷阱对电子输运的影响。进行偏压应力实验以研究TFT的稳定性，并获得对热蒸发并五苯TFT的输运机制的理解。(C)2003年，美国物理学会。
The structural and transport properties of evaporated pentacene organic thin film transistors (TFTs) are reported, and they show the influence of the deposition conditions with different inorganic dielectrics. Dielectrics compatible with large area fabrication were explored to facilitate low cost electronics on glass or flexible plastic substrates. X-ray diffraction and atomic force microscopy show a clear correlation between the morphology and the structure of the highly polycrystalline films for all dielectrics investigated. The roughness of the dielectric has a distinct influence on the morphology and the structural properties, whereas the films on smooth thermal oxide are in general highly ordered and independent of the deposition conditions. The ordered films exhibit a "thin film'' and a bulk phase, and the bulk phase volume fraction increases with the deposition temperature and the film thickness. Careful control of the deposition conditions gives virtually identical films on thermal oxide and silicon nitride dielectrics. The electronic properties of inverted staggered transistors show that the TFT mobility is correlated with the morphology and structure of the films. The TFTs exhibit very similar mobilities of similar to0.4 cm(2) /Vs and on/off ratios >10(8) on thermal oxide and silicon nitride. The impact of the dielectric on the device parameters of mobility, threshold voltage, and subthreshold voltage slope is discussed. Temperature dependent measurements of the mobility were performed to study the influence of traps on electronic transport. Bias stress experiments were carried out to investigate the stability of the TFTs, and to gain understanding of the transport mechanisms of thermally evaporated pentacene TFTs. (C) 2003 American Institute of Physics.