Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
复制标题
自组装 InAs 量子点异质结构中应变引起的波长偏移的矩阵依赖性
DOI：
10.1063/1.126097
复制
发表时间：
2000
影响因子：
4
通讯作者：
Chih
中科院分区：
文献类型：
--
作者：
N. Yeh;T. Nee;J. Chyi;T. Hsu;Chih
我们用光致发光测量方法报道了自组装InAs量子点异质结构中基质依赖的应变效应。制备了一系列样品，以检验量子点位置对所谓的应变还原层（SRL）的影响。由于SRL减小了量子点的残余流体静力应变，使用In0.16Ga0.84As SRL的InAs量子点的发射波长为1.34 μm。发射波长与SRL上帽层厚度的关系也表明了基体在点应变松弛过程中的重要作用。使用In0.16Al0.84As代替In0.16Ga0.84As作为SRL，由于In0.16Al0.84As的弹性刚度比In0.16Ga0.84As高，并且In0.16Al0.84As SRL去除的应变更小，可见波长蓝移。
We report on the matrix-dependent strain effect in self-assembled InAs quantum-dot heterostructures using photoluminescence measurements. A series of samples were prepared to examine the effect of quantum dot position with respect to the so-called strain-reducing layer (SRL). Since the SRL reduces the residual hydrostatic strain in the quantum dots, long emission wavelength of 1.34 μm is observed for the InAs quantum dots with an In0.16Ga0.84As SRL. The dependence of the emission wavelength on the thickness of the cap layer on SRL also indicates the importance of the role of matrix in the strain relaxation process of the dots. Using In0.16Al0.84As instead of In0.16Ga0.84As as the SRL, a blueshift in wavelength is observed because the elastic stiffness of In0.16Al0.84As is higher than that of In0.16Ga0.84As and less strain is removed from the dots with In0.16Al0.84As SRL.