Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon-rich silicon oxide
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon-rich silicon oxide
复制标题
富硅氧化硅电阻切换过程中电导率变化性质的微观和光谱分析
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
A. Kenyon
中科院分区：
文献类型：
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作者：
M. Buckwell;L. Montesi;A. Mehonic;Omer Reza;L. Garnett;M. Munde;S. Hudziak;A. Kenyon
基于氧化还原的电阻式随机存取存储器（RRAM）具有极大地改进当前数据存储方法的范围，尽管对材料切换机制的理解不完全。我们利用原子力显微镜（AFM）、导电原子力显微镜（cAFM）和X射线光电子能谱（XPS）研究了富硅氧化硅RRAM中电导态变化的物理过程。我们的设备的绝缘氧化层的表面分析，以建立原始和切换状态的化学和结构特性。观察到从活性层中去除氧伴随着不同程度的表面变形和在其他绝缘材料中的高导电性区域的出现。这些结果支持了目前公认的模型的电阻开关机制，是依赖于氧离子的迁移下的电偏置。（© 2015 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Redox-based resistive random access memory (RRAM) has the scope to greatly improve upon current methods of data storage, despite incomplete understandings of material switching mechanisms. We make use of atomic force microscopy (AFM), conductive atomic force microscopy (cAFM) and X-ray photoelectron spectroscopy (XPS) to characterise the physical processes occurring in the changes in conductance state in silicon-rich silicon oxide RRAM. Surface analyses of the insulating oxide layer of our devices are employed to establish the chemical and structural properties of pristine and switched states. The removal of oxygen from the active layer is observed to be concomitant with the appearance of varying degrees of surface distortion and regions of high conductivity in an otherwise-insulating material. These results support the currently-recognised model of a resistive switching mechanism that is reliant upon the migration of oxygen ions under an electrical bias. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)