Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers
Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers
复制标题
具有溅射非晶硅势垒的氮化铌-铌约瑟夫森隧道结
DOI：
10.1063/1.93214
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
M. Nisenoff
中科院分区：
文献类型：
--
作者：
D. Jillie;H. Kroger;L. Smith;E. Cukauskas;M. Nisenoff
采用与集成电路制造完全兼容的工艺制备了具有溅射非晶硅势垒的NbN-α-Nb约瑟夫森隧道结(NbN-SiNb)。这些结具有良好的质量和均匀性，可用于数字电路和S-i-S探测器。结的质量主要取决于NBN表面的性质，并且似乎与该表面的UV/可见光反射率有很好的相关性。
Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN‐αSi‐Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S‐I‐S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.