Ultrashort lifetime photocarriers in Ge thin films
Ultrashort lifetime photocarriers in Ge thin films
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Ge薄膜中的超短寿命光载流子
DOI：
10.1063/1.115779
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发表时间：
1996
影响因子：
4
通讯作者：
T. Katoda
中科院分区：
文献类型：
--
作者：
N. Sekine;K. Hirakawa;F. Sogawa;Y. Arakawa;N. Usami;Y. Shiraki;T. Katoda
在蓝宝石衬底上生长的离子注入Ge薄膜中，获得了短至600fs的超短载流子寿命。由光导测量确定的光载流子迁移率相当高(∼100cm2/V S)。我们观察到了光导偶极子天线几何结构的太赫兹(THz)辐射。
An ultrashort lifetime of photocarriers as short as 600 fs has been obtained in ion‐implanted Ge thin films grown on sapphire substrates. The photocarrier mobility determined by photoconductivity measurements is found to be reasonably high (∼100 cm2/V s). We have observed terahertz (THz) radiation from a photoconductive dipole antenna geometry.