Impact of gate voltage bias on reverse recovery losses of power MOSFETs
Impact of gate voltage bias on reverse recovery losses of power MOSFETs
复制标题
栅极电压偏置对功率 MOSFET 反向恢复损耗的影响
DOI：
10.1109/apec.2006.1620721
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. López
中科院分区：
文献类型：
--
作者：
R. Elferich;T. López
建立了一个行为功率MOSFET模型，该模型考虑了体二极管反向恢复对栅极电压的依赖关系。这种依赖性与所谓的“身体效应”密切相关，也就是第三象限的亚阈值通道传导增强。该模型需要两个可从有限元器件模拟中得出的参数。这些参数与测量中发现的参数一致。降压变流器的仿真例子说明了同步整流器的栅极偏置对反向恢复和栅极反弹的影响，从而对总开关损耗的影响。
A behavioral power MOSFET model is shown that includes the dependence of body diode reverse recovery on the gate voltage. That dependence is strongly associated with the so called 'body effect', i.e. the enhanced sub-threshold channel conduction in the third quadrant. The model requires two parameters that can be derived from FE device simulations. These parameters agree with those found in a measurement. Step-down converter simulation examples demonstrate the impact of the gate bias of the synchronous rectifier on both reverse recovery and gate bouncing and hence on total switching losses.