Mechanical Control of Electroresistive Switching
Mechanical Control of Electroresistive Switching
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DOI：
10.1021/nl401411r
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发表时间：
2013-09-01
期刊：
影响因子：
10.8
通讯作者：
Kalinin, Sergei V.
中科院分区：
文献类型：
--
作者：
Kim, Yunseok;Kelly, Simon J.;Kalinin, Sergei V.
由离子动力学或铁相变介导的滞后金属绝缘体转变（MIT）是非易失性存储器和逻辑器件的新兴应用的基础。绝大多数的应用和研究都探索了MIT与电场或温度的耦合。在这里，我们认为MIT耦合离子动力学应该由机械刺激控制，我们称之为压电化学效应的行为。我们通过实验验证了这一效应，并证明它既可以研究材料物理学，也可以通过机械书写和基于电流的读出实现新的数据存储技术。
Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.