STOICHIOMETRY CONTROL OF ATOMIC-BEAM FLUXES BY PRECIPITATED IMPURITY PHASE DETECTION IN GROWTH OF (PR,CE)(2)CUO4 AND (LA,SR)(2)CUO4 FILMS

STOICHIOMETRY CONTROL OF ATOMIC-BEAM FLUXES BY PRECIPITATED IMPURITY PHASE DETECTION IN GROWTH OF (PR,CE)(2)CUO4 AND (LA,SR)(2)CUO4 FILMS
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DOI:
10.1063/1.114431
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发表时间:
1995-10-23
影响因子:
4
通讯作者:
SATO, H
SATO, H
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
NAITO, M;SATO, H

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这封信描述了一种通过在 T'-(Pr,Ce)(2)CuO4 和 T-(La,Sr)(2)CuO4 薄膜生长过程中使用反射高能电子衍射检测表面沉淀杂质相来检测原子束通量的阳离子比 [Cu/(Pr+Ce) 或 Cu/(La+Sr)] 中轻微偏离化学计量(小于 2%-3%)的方法。该方法基于以下事实:非化学计量的助熔剂在这些氧化物的薄膜生长过程中不可避免地在表面产生某些杂质相的沉淀,并且杂质相的种类仅由非化学计量的类型决定;富含铜或富含镧系元素。此外,已经发现可以通过随后的通量重新调节从具有由富镧系元素沉积产生的沉淀物的表面恢复无沉淀物的表面,但是从具有由富铜沉积产生的沉淀物的表面很难恢复。 (C) 1995 年美国物理研究所。
This letter describes a method to sense slight off-stoichiometry (less than 2%-3%) in the cation ratio [Cu/(Pr+Ce) or Cu/(La+Sr)] of atomic beam fluxes by detecting precipitated impurity phases on the surface using reflection high-energy electron diffraction during growth of T'-(Pr,Ce)(2)CuO4 and T-(La,Sr)(2)CuO4 films. The method is based on the facts that off-stoichiometry of fluxes inevitably produces precipitates of certain impurity phases on the surface in film growth of these oxides, and that the species of the impurity phases are solely determined by the type of off-stoichiometry; copper rich or lanthanoid rich. Furthermore, it has been found that it is possible to recover a precipitate-free surface, from a surface with precipitates produced by lanthanoid-rich deposition, by later flux readjustment, but it is difficult from a surface with precipitates produced by copper-rich deposition. (C) 1995 American Institute of Physics.