Breakdown behavior of electronics at variable pulse repetition rates
Breakdown behavior of electronics at variable pulse repetition rates
复制标题
可变脉冲重复率下电子器件的击穿行为
DOI：
10.5194/ars-4-7-2006
复制
发表时间：
2006
影响因子：
0.4
通讯作者：
H. Garbe
中科院分区：
文献类型：
--
作者：
S. Korte;H. Garbe
摘要。暴露在单一瞬态电磁脉冲下的电子器件的击穿行为是多年来研究的课题。最先进的脉冲发生器还提供了产生可变脉冲重复率的脉冲序列的可能性。本文描述了这种重复频率变化对电子系统击穿行为的影响。为此目的，微控制器系统在线led暴露于重复率在1khz和100khz之间的脉冲期间进行检查。特别注意电子器件的击穿阈值和击穿概率。
Abstract. The breakdown behavior of electronics exposed to single transient electromagnetic pulses is subject of investigations for several years. State-of-the-art pulse generators additionally provide the possibility to generate pulse sequences with variable pulse repetition rate. In this article the influence of this repetition rate variation on the breakdown behavior of electronic systems is described. For this purpose microcontroller systems are examined during line-led exposure to pulses with repetition rates between 1 KHz and 100 KHz. Special attention is given to breakdown thresholds and breakdown probabilities of the electronic devices.