A zone-based approach for physics-based FET compact models
A zone-based approach for physics-based FET compact models
复制标题
基于物理的 FET 紧凑模型的基于区域的方法
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
R. Trew
中科院分区：
文献类型：
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作者：
R. Trew
等效电路场效应晶体管模型（紧凑模型）广泛用于集成电路设计和制造。最常用的模型不是从基本的物理原理推导出来的，而是通过实验中的参数提取技术确定的。这要求在确定模型之前制造和表征器件。另一种方法是从基础物理学中推导出模型，这使得模型可以用于器件设计和电路应用。在这项工作中，一个区域为基础的方法，以物理为基础的紧凑型模型的发展。该方法从基本物理原理出发，生成一个模型，准确描述器件的直流和射频性能。基于区域的方法基于操作物理现象将设备划分为多个区域。用一组简化的方程描述各个区域，然后将这些区域连接起来形成完整的模型。基于物理的方法产生了一个紧凑的模型，可以很容易地制定，包括所有相关的物理现象，已知影响设备的性能。基于区域的方法产生一个灵活的设备模型，是定量准确，易于采用系统级仿真器。
Equivalent circuit field-effect transistor models (compact models) are extensively used in integrated circuit design and manufacture. The most commonly used models are not derived from basic physical fundamentals, but are rather determined by parameter extraction techniques from experiment. This requires that the device be fabricated and characterized before the model can be determined. An alternate approach is to derive the model from fundamental physics, which permits the model to be used in device design as well as circuit applications. In this work a zone-based approach to physics-based compact model development is described. The approach starts from fundamental physical principles and produces a model that accurately describes the dc and RF performance of the device. The zone-based approach divides the device into zones based upon operational physical phenomena. The various zones are described with a simplified set of equations, and the zones are then linked to form the complete model. The physics-based approach produces a compact model that can easily be formulated to include all pertinent physical phenomena known to affect device performance. The zone-based approach yields a flexible device model that is both quantitatively accurate and easy to employ in system level simulators.