High‐nitrogen‐content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy
High‐nitrogen‐content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy
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采用 TBA 和 DMHy 金属有机气相外延法在 GaAs 上生长高氮含量 InGaAsN 薄膜
DOI：
10.1002/pssa.200565240
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
K. Onabe
中科院分区：
文献类型：
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作者：
S. Sanorpim;F. Nakajima;W. Ono;R. Katayama;K. Onabe
我们研究了MOVPE生长高N含量InxGa1-xAs1-yNY薄膜的工艺参数及其结构和光学性质。N掺入的控制主要取决于1，1-二甲基肼(DMHy)的摩尔流量和生长温度。随着DMHy摩尔流量的增加，高分辨X射线衍射峰发生明显的移位，表明N的掺杂量增加。当生长温度从6 5 0℃降至5 0 0℃时，薄膜的N含量从y∼的0.5%增加到3.6%。随着N含量的增加，薄膜的光致发光(PL)峰和光反射(PR)信号明显红移(E0跃迁)。最终得到了室温E0跃迁能为1.11 eV的晶格匹配的In0.06Ga0.94As0.979N0.021/GaAs薄膜。值得注意的是，与使用AsH3生长的相应薄膜的情况一样，使用TbAs生长的InGaAsN薄膜的结构和光学性质强烈地依赖于N含量。此外，PR谱特征表明，用TbAs代替AsH3生长出禁带宽度小于1.0 eV的InGaAsN薄膜。结果表明，DMHy流量和生长温度对高质量单相稀氮化砷合金半导体的生长起着关键作用。(2006 Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We investigate the parameters used in the MOVPE growth of high‐N‐content Inx Ga1–x As1–y Ny films on GaAs and their structural and optical properties. The N incorporation control was found to mainly depend on the 1,1‐dimethylhydrazine (DMHy) molar flow rate and the growth temperature. With increasing the DMHy molar flow rate, the high‐resolution X‐ray diffraction measurements exhibited a clear diffraction peak shift, representing the increase in N incorporation. On the other hand, the N content was increased from y ∼ 0.5% to 3.6% with decreasing the growth temperature from 650 °C down to 500 °C. The red‐shift in both the photoluminescence (PL) peak and the photoreflactance (PR) signal (E 0 transition) with increasing N content was clearly observed. Finally, the lattice‐matched In0.06Ga0.94As0.979N0.021/GaAs film corresponding to the room‐temperature E 0 transition energy of 1.11 eV was achieved. It is noticeable that the structural and optical properties of the InGaAsN films grown using TBAs strongly depends on the N content, as in the case of corresponding films grown using AsH3. Besides, the PR spectral feature demonstrated the growth of the InGaAsN film whose bandgap is lower than 1.0 eV by using TBAs in place of AsH3. The present results show that the DMHy flow rate and the growth temperature play a critical role in the growth of high‐quality and single‐phase dilute‐nitride‐arsenide alloy semiconductors. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
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作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y