Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
复制标题
通过在 InGaN 基绿光激光二极管中插入 InGaN/GaN 浅量子阱层来增强性能
DOI：
10.1109/jphot.2017.2679719
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发表时间：
2017-04-01
影响因子：
2.4
通讯作者：
Li, Mo
中科院分区：
文献类型：
--
作者：
Yang, Jing;Zhao, Degang;Li, Mo
生长了一系列具有不同InGaN/GaN浅量子阱(SQW)中间层的样品，研究了它们对InGaN/GaN多量子阱光学性质和激光二极管(LDs)光学限制因子的影响。研究发现，当在InGaN/GaN绿色多量子阱(GMQW)下方插入一个SQW过渡层时，GMQW有源区的发射强度增加。这归因于GMQW中应变的降低导致量子受限斯塔克效应和V-凹坑密度的降低。此外，我们还发现在绿光二极管中插入一个SQW过渡层在理论上导致了光模的微弱泄漏。因此，他们的表现将得到提高。
A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement factor of laser diodes (LDs) are investigated. It is found that when an SQW interlayer is inserted below InGaN/GaN green multiquantum wells (GMQWs), the emission intensity of the GMQW active region increases. This is attributed to the reduction of quantum confined stark effect and the V-pit density due to the decreased strain in GMQWs. In addition, we also find that inserting an SQW interlayer theoretically results in a weak leakage of the optical mode for green LDs. Therefore, their performance will be improved.