Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation
Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation
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DOI：
10.1103/physrevb.86.035301
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发表时间：
2012-07-02
影响因子：
3.7
通讯作者：
Harada, Yukihiro
中科院分区：
文献类型：
--
作者：
Kita, Takashi;Maeda, Tsuyoshi;Harada, Yukihiro
利用双色光激发光谱研究了一维光子腔结构中InAs/GaAs自组装量子点从导带中间态到连续态的时间分辨带内跃迁.通过调节光子谐振腔的共振能量，使带内跃迁的能量小于中间态和量子化空穴态之间的带间跃迁能量。带间光致发光强度被观察到急剧减少，由于在中间状态的载流子使用近红外激光泵浦。我们提出了一个描述InAs/GaAs量子点系统中载流子弛豫过程的模型，该模型考虑了量子点中的双光子吸收和泡利阻塞。
We have studied the time-resolved intraband transition from the intermediate state to the continuum state of the conduction band in InAs/GaAs self-assembled quantum dots ( QDs) embedded in a one-dimensional photonic cavity structure using two-color photoexcitation spectroscopy. The resonant energy of the photonic cavity was tuned to enhance the intraband transition with an energy smaller than the interband transition energy between the intermediate state and the quantized hole states. The interband photoluminescence intensity was observed to be drastically reduced due to the pumping out of carriers in the intermediate state using near-infrared laser light. We proposed a model describing the carrier relaxation process in the InAs/GaAs QD system, where the two-photon absorption and the Pauli blocking in QDs are considered.