Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body
Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body
复制标题
用掺氮金刚石衬底制作反型p沟MOSFET
DOI：
10.1063/5.0075964
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发表时间：
2021-12-13
影响因子：
4
通讯作者：
Tokuda, Norio
中科院分区：
文献类型：
--
作者：
Matsumoto, Tsubasa;Yamakawa, Tomoya;Tokuda, Norio
采用微波等离子体增强化学气相沉积(MPECVD)技术制备了掺氮金刚石体常关型反转p沟道金属氧化物半导体场效应晶体管(MOSFET)。该MOSFET的漏电流密度为-1.7 mA/mm。到目前为止，该值与使用磷(P)掺杂n型钻石体制得的反转p沟道MOSFET的器件性能相似。用于N掺杂的N-2比用于P掺杂的PH3更安全；而且，掺杂浓度高度可控。由于MOSFET是一种经典的电子器件，由栅极电压驱动，即使在深施主电平上也可以顺利工作。观察到的经典MOSFET通过N掺杂体工作的特性对金刚石功率器件的发展至关重要。本文讨论了N掺杂钻石体的意义以及用N掺杂钻石体制作的反型p沟道MOSFET的电学特性。(C)2021年作者(S)。除另有说明外，所有文章内容均受知识共享署名(CC BY)许可证(http://creativecommons.org/licenses/by/4.0/).的许可
A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited a drain current density of -1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N-2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. In this paper, we discuss the significance of the N-doped diamond body and electrical characteristics of the inversion p-channel MOSFET fabricated using an N-doped diamond body. (C) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).