Zn-impurity effects on quasiparticle scattering in La 2 − x Sr x CuO 4 studied by angle-resolved photoemission spectroscopy
Zn-impurity effects on quasiparticle scattering in La 2 − x Sr x CuO 4 studied by angle-resolved photoemission spectroscopy
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通过角分辨光电子能谱研究锌杂质对 La 2 − x Sr x CuO 4 中准粒子散射的影响
DOI：
10.1103/physrevb.80.245113
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发表时间：
2009
影响因子：
3.7
通讯作者：
S. Uchida
中科院分区：
文献类型：
--
作者：
T. Yoshida;S. Komiya;X. Zhou;Kiyohisa Tanaka;A. Fujimori;Z. Hussain;Z. Shen;Y. Ando;H. Eisaki;S. Uchida
利用角分辨光电子能谱研究了Zn掺杂La{sub 2-x}Sr{sub x}CuO{sub 4}的低能电子结构. Zn杂质引起的动量分布曲线（MDC）中准粒子宽度的增加在整个费米面上近似各向同性，并且在费米能级（EF）附近与能量无关。MDC宽度的增加与由于Zn杂质而导致的剩余电阻率的增加一致，如果我们假设载流子数为1-x（x=0.17）并且Zn杂质是接近么正性极限的潜在散射体。对于x=0.03，剩余电阻率被发现是高于预期的MDC宽度，和周围的Zn杂质诱导的反铁磁波动的影响进行了讨论。x=0.17时，（{pi}，0）附近的谱前沿相对于Zn取代的E{sub F}向更高的能量方向移动，表明超导能隙减小。
Angle-resolved photoemission measurements were performed on Zn-doped La{sub 2-x}Sr{sub x}CuO{sub 4} to investigate the effects of Zn impurities on the low-energy electronic structure. The Zn-impurity-induced increase in the quasiparticle width in momentum distribution curves (MDCs) is approximately isotropic on the entire Fermi surface and energy independent near the Fermi level (EF). The increase in the MDC width is consistent with the increase in the residual resistivity due to the Zn impurities if we assume the carrier number to be 1-x for x=0.17 and the Zn impurity to be a potential scatterer close to the unitarity limit. For x=0.03, the residual resistivity is found to be higher than that expected from the MDC width, and the effects of antiferromagnetic fluctuations induced around the Zn impurities are discussed. The leading edges of the spectra near ({pi},0) for x=0.17 are shifted toward higher energies relative to E{sub F} with Zn substitution, indicating a reduction in the superconducting gap.
影响因子：
8.6
作者：
K. Terashima;Hideki Matsui;Takafumi Sato;Tetsuo Takahashi;M. Kofu;M. Kofu;M. Kofu;Kazuma Hirota
通讯作者：
K. Terashima;Hideki Matsui;Takafumi Sato;Tetsuo Takahashi;M. Kofu;M. Kofu;M. Kofu;Kazuma Hirota
影响因子：
3.7
作者：
Ono, S.;Komiya, Seiki;Ando, Yoichi
通讯作者：
Ando, Yoichi