Linewidth variations in photoresist patterns on profiled surfaces
Linewidth variations in photoresist patterns on profiled surfaces
复制标题
异形表面上光刻胶图案的线宽变化
DOI：
10.1109/t-ed.1975.18163
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发表时间：
1975
影响因子：
3.1
通讯作者：
H. Binder
中科院分区：
文献类型：
--
作者：
D. Widmann;H. Binder
在衬底表面上的轮廓台阶附近的光刻胶厚度不均匀性导致AZ 1350光刻胶几何形状的线宽变化。该效应随着衬底的反射率的增加、光致抗蚀剂层厚度的减小以及曝光系统的对比度转移的减小而增加。结果表明，当抗蚀剂厚度为抗蚀剂中曝光波长的一半的倍数时，抗蚀剂线宽最大。
Photoresist thickness nonuniformities in the vicinity of profile steps on substrate surfaces lead to linewidth variations of AZ 1350 photoresist geometries. The effect increases with increasing reflectivity of the substrate, decreasing photoresist layer thickness, and decreasing contrast transfer of the exposure system. It is shown that the photoresist linewidth is maximum when the resist thickness is a multiple of half the exposure wavelength in the resist.