Nanoelectromechanical switch with low voltage drive
Nanoelectromechanical switch with low voltage drive
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DOI：
10.1063/1.2983743
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发表时间：
2008-09
影响因子：
4
通讯作者：
J. Jang;S. Cha;Youngjin Choi;T. Butler;D. Kang;D. Hasko;J. Jung;Y. Jin;Jong Min Kim;G. Amaratunga
中科院分区：
文献类型：
--
作者：
J. Jang;S. Cha;Youngjin Choi;T. Butler;D. Kang;D. Hasko;J. Jung;Y. Jin;Jong Min Kim;G. Amaratunga
垂直碳纳米管基纳米机电开关由于其垂直栅极和结构元件之间的窄间隙而显示出优异的低电压驱动（± 4.5V）。绝缘体沉积和选择性蚀刻工艺步骤通过自对准简化了制造。绝缘体的厚度决定了差距的宽度，并且用于制造垂直栅极的蚀刻工艺消除了对复杂的光刻步骤的需要。低驱动电压提高了器件的稳定性和可靠性，并允许器件在广泛的应用中部署。
The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications.